GS61008P-TR

Kuvat ovat vain viitteellisiä
Osa numero
GS61008P-TR
Valmistaja
GaN Systems
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled

tekniset tiedot

Valmistaja
GaN Systems
Luokat
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
90 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Packaging
Reel
Qg - Gate Charge
8 nC
Rds On - Drain-Source Resistance
9.5 mOhms
Technology
GaN
Tradename
GaNPX
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
1.3 V

Uusimmat arvostelut

Quick delivery. Secure packing. Excellent product. Thank you

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

Parcel received shook cool all 10 pieces is not checked check unsubscribe

Ihmiset katsovat GS61008P-TR sitten ostivat

Aiheeseen liittyvät avainsanat GS61

  • GS61008P-TR Integroitu
  • GS61008P-TR RoHS
  • GS61008P-TR PDF-tietosivu
  • GS61008P-TR Datalehdet
  • GS61008P-TR Osa
  • GS61008P-TR Ostaa
  • GS61008P-TR Jakelija
  • GS61008P-TR PDF
  • GS61008P-TR Component
  • GS61008P-TR ICS
  • GS61008P-TR Lataa PDF
  • GS61008P-TR Lataa tiedot
  • GS61008P-TR Toimittaa
  • GS61008P-TR toimittaja
  • GS61008P-TR Hinta
  • GS61008P-TR Tietolomake
  • GS61008P-TR Kuva
  • GS61008P-TR Kuva
  • GS61008P-TR inventaario
  • GS61008P-TR kalusto
  • GS61008P-TR Alkuperäinen
  • GS61008P-TR halvin
  • GS61008P-TR Erinomainen
  • GS61008P-TR Lyijytön
  • GS61008P-TR määrittely
  • GS61008P-TR Kuumat tarjoukset
  • GS61008P-TR Break Hinta
  • GS61008P-TR Tekniset tiedot