Osa numero DMG2307LQ-7 Valmistaja Diodes Incorporated Luokat MOSFET RoHS Datalehdet DMG2307LQ-7 Kuvaus MOSFET 30V P-Ch Enhancement Mode
Valmistaja Diodes Incorporated Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 3.8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.36 W Qg - Gate Charge 8.2 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 90 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V