Osa numero IGP50N60TXKSA1 Valmistaja Infineon Technologies Luokat IGBT Transistors RoHS Datalehdet IGP50N60TXKSA1 Kuvaus IGBT Transistors LOW LOSS IGBT TECH 600V 50A
Valmistaja Infineon Technologies Luokat IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 90 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 333 W Series Trenchstop IGBT3 Technology SI