Osa numero IKA08N65H5 Valmistaja Infineon Technologies Luokat IGBT Transistors RoHS Datalehdet IKA08N65H5 Kuvaus IGBT Transistors IGBT PRODUCTS
Valmistaja Infineon Technologies Luokat IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 10.8 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 FP Packaging Tube Pd - Power Dissipation 31.2 W Series Trenchstop 5 H5 Technology SI