Osa numero IKD03N60RFATMA1 Valmistaja Infineon Technologies Luokat IGBT Transistors RoHS Datalehdet IKD03N60RFATMA1 Kuvaus IGBT Transistors IGBT w/ INTG DIODE 600V 5A
Valmistaja Infineon Technologies Luokat IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.2 V Configuration Single Continuous Collector Current at 25 C 5 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 53.6 W Series Trenchstop RC Technology SI