Osa numero IKFW40N60DH3EXKSA1 Valmistaja Infineon Technologies Luokat IGBT Transistors RoHS Datalehdet IKFW40N60DH3EXKSA1 Kuvaus IGBT Transistors HOME APPLIANCES 14
Valmistaja Infineon Technologies Luokat IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.3 V Configuration Single Continuous Collector Current at 25 C 34 A Maximum Gate Emitter Voltage 30 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO247-3 Packaging Tube Pd - Power Dissipation 111 W Series Trenchstop High Speed 3 Technology SI