Osa numero IGB03N120H2 Valmistaja Infineon Technologies Luokat IGBT Transistors RoHS Datalehdet IGB03N120H2 Kuvaus IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Valmistaja Infineon Technologies Luokat IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Configuration Single Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Series IGB03N120 Technology SI