Osa numero IQE006NE2LM5CGATMA1 Valmistaja Infineon Technologies Luokat MOSFET RoHS Datalehdet IQE006NE2LM5CGATMA1 Kuvaus MOSFET TRENCH <= 40V
Valmistaja Infineon Technologies Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 298 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TTFN-9-1 Packaging Cut Tape, Reel Pd - Power Dissipation 89 W Qg - Gate Charge 28.5 nC Rds On - Drain-Source Resistance 650 uOhms Technology SI Tradename OptiMOS Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 25 V Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 2 V