Osa numero IGO60R070D1AUMA1 Valmistaja Infineon Technologies Luokat MOSFET RoHS Datalehdet IGO60R070D1AUMA1 Kuvaus MOSFET GAN HV
Valmistaja Infineon Technologies Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 31 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case DSO-20 Packaging Cut Tape, Reel Pd - Power Dissipation 125 W Qg - Gate Charge 5.8 nC Rds On - Drain-Source Resistance 70 mOhms Technology GaN Tradename CoolGaN Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 900 mV