Osa numero SQ3460EV-T1_GE3 Valmistaja Vishay Semiconductors Luokat MOSFET RoHS Datalehdet SQ3460EV-T1_GE3 Kuvaus MOSFET 20V 8A 3.6W AEC-Q101 Qualified
Valmistaja Vishay Semiconductors Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.6 W Qg - Gate Charge 14 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 25 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV