Osa numero SQ4532AEY-T1_GE3 Valmistaja Vishay / Siliconix Luokat MOSFET RoHS Datalehdet SQ4532AEY-T1_GE3 Kuvaus MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
Valmistaja Vishay / Siliconix Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7.3 A, 5.3 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.3 W Qg - Gate Charge 5.9 nC, 7.9 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 21 mOhms, 56 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V