Osa numero SQ3425EV-T1_GE3 Valmistaja Vishay Semiconductors Luokat MOSFET RoHS Datalehdet SQ3425EV-T1_GE3 Kuvaus MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified
Valmistaja Vishay Semiconductors Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7.4 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 5 W Qg - Gate Charge 10.3 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 49 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.4 V