Osa numero TPH3205WSBQA Valmistaja Transphorm Luokat MOSFET RoHS Datalehdet TPH3205WSBQA Kuvaus MOSFET GAN FET 650V 35A TO247
Valmistaja Transphorm Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 35 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 125 W Qg - Gate Charge 42 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 62 mOhms Technology GaN Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 18 V, + 18 V Vgs th - Gate-Source Threshold Voltage 1.6 V