Osa numero SQ4080EY-T1_GE3 Valmistaja Vishay / Siliconix Luokat MOSFET RoHS Datalehdet SQ4080EY-T1_GE3 Kuvaus MOSFET N-Channel 150V SO-8
Valmistaja Vishay / Siliconix Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 18 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Cut Tape, Reel Pd - Power Dissipation 7.1 W Qg - Gate Charge 33 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 70 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 150 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V