Osa numero SQ2351ES-T1_GE3 Valmistaja Vishay Semiconductors Luokat MOSFET RoHS Datalehdet SQ2351ES-T1_GE3 Kuvaus MOSFET P-Channel 20V AEC-Q101 Qualified
Valmistaja Vishay Semiconductors Luokat MOSFET Channel Mode Enhancement Id - Continuous Drain Current 3.2 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 5.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 80 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V